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Gettering and Defect Engineering in Semiconductor Technology XII

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€ · Paperback

Czochralski Silicon Deep Level Defect Diffusion Dislocation DLTS EBIC Germanium Grain Boundary Hydrogen Ion Implantation Lifetime Oxygen Photoluminescence (PL) Precipitation

Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the ...

Diffusion in Silicon - 10 Years of Research

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€ · eBook (Download + Online)

Activation Energy Arsenic Biaxial Stresses Boron Deep Levels Transient Spectroscopy DLTS Diffusion Diffusion Constant Divacancy ECR Plasma CVD Interstitial Ion Implantation Plasma Etching Point Defect Pseudopotentials Self-Interstitial

This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon....

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