Gettering and Defect Engineering in Semiconductor Technology XII
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Beschreibung
GADEST 2007
Selected, peer reviewed papers from Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007" held from 14th to 19th October 2007 in Italy at the EMFCSC
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Autor*in
Trans Tech Publications Ltd
Themen in »Gettering and Defect Engineering in Semiconductor Technology XII«
Czochralski Silicon Deep Level Defect Diffusion Dislocation DLTS EBIC Germanium Grain Boundary Hydrogen Ion Implantation Lifetime Oxygen Photoluminescence (PL) Precipitation