Diffusion in Silicon - 10 Years of Research

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10 Years of Research

This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

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Trans Tech Publications Ltd

Themen in »Diffusion in Silicon - 10 Years of Research«

Activation Energy Arsenic Biaxial Stresses Boron Deep Levels Transient Spectroscopy DLTS Diffusion Diffusion Constant Divacancy ECR Plasma CVD Interstitial Ion Implantation Plasma Etching Point Defect Pseudopotentials Self-Interstitial

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