Ergebnisse für: Stacking Fault
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Volume is indexed by Thomson Reuters BCI (WoS).
Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including car...
Volume is indexed by Thomson Reuters CPCI-S (WoS).Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semicon...
This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is...
Current fundamental electronic-structure theory allows for the accurate prediction and characterization of elemental metals adopting any allotropic structure, intermetallic compounds, and other metal-rich phases. From an engineering perspective, there is a need for structural materials that are suit...