Silicon Carbide and Related Materials - 2002
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Beschreibung
ECSCRM 2002
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide and Related Materials - 2002«
4H-SiC Carbide Silicon (SiC) Chemical Vapor Deposition (CVD) Defect Epitaxial Growth Micropipe Stacking Fault