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Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes

Pietro della Casa
Cuvillier Verlag
87.48 € · Buch

AlGaAs Chlorverbindungen Epitaxie Fernfeld GaAs-etching GaInP Galliumarsenid Gasmischsystem Halbleiter Halbleitern Helligkeit In-situ-Ätzen Ionenimplantation Kohlenstofftetrabromid Kristallstruktur

This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwat...

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