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GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements

Peng Luo
Cuvillier Verlag
48 € · Buch

A1GAN/GaN Abbreviations Capacitances Circuit Conductance Match Device Drain-Lag Extraction Extrinsic GaN Hemt Gate-Lag Ham Intrinsic Large-Signal Model Types Large-signal

GaN HEMTs are regarded as one of the most promising RF power transistor technologies thanks to their high-voltage high-speed characteristics. However, they are still known to be prone to trapping effects, which hamper achievable output power and linearity. Hence, accurately and efficiently modeling ...

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