Polycrystalline Semiconductors V
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Beschreibung
Bulk Materials, Thin Films and Devices
Proceedings of the Fifth International Conference on Polycrystalline Semiconductors V, held in Schwäbisch Gmünd, Germany, September 13-18, 1998
Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.
The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.
Autor*in
Trans Tech Publications Ltd
Themen in »Polycrystalline Semiconductors V«
Crystallization Deep Level Transient Spectroscopy Diffusion Length Dislocation Glass Substrate Grain Boundary Microcrystalline Silicon Passivation Photoconductivity Photoluminescence (PL) Photosensitivity Photovoltaic (PV) Silicon Simulation