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Wide Bandgap Semiconductor Based Micro/Nano Devices

MDPI
€ · Paperback

optical band gap tungsten trioxide film annealing temperature electrochromism AlGaN/GaN HEMT DIBL effect channel length modulation power amplifier W band high electron mobility transistors high electron mobility transistor (HEMT) AlGaN/GaN ohmic contact regrown contact ammonothermal GaN

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key ...

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