Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride
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Beschreibung
This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.
This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.
Winner of the best thesis award from Nanyang Technological University’s EEE (Electrical and Electronic Engineering) Department Exhaustively reviews key recent research into the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD) Demonstrates large-area aligned growth and up to an eightfold reduction in the cost of h-BN production geared toward potential commercial applications
Autor*in
Roland Yingjie Tay
Themen in »Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride«
Two-Dimensional Materials Hexaganol Boron Nitride Nanosheets Atmospheric pressure Chemical Vapor Deposition (APCVD) Nanocrystalline Boron Nitride Films Large-Area Aligned Growth Hexagonal Boron Carbon Nitride Single-Crystal Growth Electropolished Copper Foil Trimethylamine Borane (TMAB) precursor Large-Area Atomically Thin Films