Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications
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Beschreibung
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Nominated as an outstanding thesis by the University of Chinese Academy of Sciences Proposes a novel Ti-Sb-Te alloy for high-speed and low-power phase change memory Covers both the mechanism and component optimizations of the Ti-Sb-Te alloy, as well as its applications in phase-change memory chips Includes supplementary material: sn.pub/extras
Autor*in
Min Zhu
Themen in »Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications«
Phase Change Memory Phase Change Mechanism ABAB Ring Statistics Non-volatile Memory Reversible physical Phase Transition Electron Charge-based Mechanism