Nanoscale Redox Reaction at Metal/Oxide Interface
A Case Study on Schottky Contact and ReRAM
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Beschreibung
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Describes the use of interface control to maximize the potential of materials in nanoscale phenomena Introduces the combinatorial synthesis method for thin film growth used in the optimization of numerous multi-component functional materials Explains analysis methods combining angle-resolved measurements and hard x-ray photoelectron spectroscopy
Autor*in
Takahiro Nagata
Themen in »Nanoscale Redox Reaction at Metal/Oxide Interface«
Combinatorial Synthesis Metal/oxide Interface Plasma Surface Treatment Resistive Random Access Memory Schottky Contact Surface Electron Accumulation Layer X-ray Photoelectron Spectroscopy X-ray Reflectometry