Light Absorption and Radiative Recombination in Thin-Film Solar Cells
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Beschreibung
Solar cells and light emitting diodes are generally the same kind of device. Whereas solar cells
are optimized for light absorption, light emitting diodes are optimized for light emission, i.e.
radiative recombination. Both processes are present in each of these devices. The electroluminescence
depends on the transport of injected charge carriers and radiative recombination,
whereas the external quantum efficiency originates from light absorption and the extraction of
photo generated charge carriers.
According to Donolato and Rau, the external quantum efficiency and the luminescence are connected
by the reciprocity relation. However, the reciprocity relation only holds under certain
circumstances. Whereas these circumstances are given in defect-free solar cells made from
crystalline silicon for instance, the situation can be different in thin-film devices. The physics
in thin-film devices can be affected by localized inter-band defect states, which also affect the
reciprocity relation. These states are found in thin-film chalcopyrite Cu(In,Ga)Se2 np heterojunction,
hydrogenated microcrystalline silicon pin, and hydrogenated amorphous silicon pin
devices as investigated in this thesis. This thesis is structured within this sequence, studying
systems with increasing concentrations of defect states in their band gap to investigate these circumstances,
where the reciprocity relation still holds.
Autor*in
Thomas Christian Mathias Müller
Themen in »Light Absorption and Radiative Recombination in Thin-Film Solar Cells«
ASA Light Absorption Solar cells