Group III-Nitride Nanowires for Optoelectronic Control of Nitrogen-Vacancy Centers in Diamond

Beschreibung

Nanowires are used to overcome limitations of epitaxial thin film growth, and to improve the crystal quality of semiconductors. Here, group III-nitride nanowires were employed for two approaches: (i) The development of highly-strained coaxial heterostructures to explore novel optoelectronic and sensing applications; (ii) Exploiting the intrinsic waveguide geometry and electronic properties of gallium nitride nanowires to improve the read-out performance of nitrogen-vacancy centers in diamond.

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Martin Hetzl

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Diamond GaN Nanowires

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