Electronic and Optical Properties of Quantum Dots: A Tight-Binding Approach
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Beschreibung
Semiconductor quantum dots (QDs) are of great topical interest due to the possibility to study basic quantum phenomena and their
potential for novel applications. Here, the electronic and optical
properties of semiconductor QDs are studied by means of
tight-binding (TB) models combined with configuration interaction
calculations.
An empirical TB model is used to investigate the electronic states
of group II-VI semiconductor QDs with a zinc blende structure.
Within this approach pyramidal-shaped CdSe QDs embedded in a
ZnSe matrix as well as spherical CdSe nanocrystals are studied. The theoretical results are found to be in excellent agreement with
recent experimental data.
Additionally, we study the electronic and optical properties of
self-assembled nitride QDs. Excitonic absorption as well as
multi-exciton emission spectra are analyzed for a series of
different lens-shaped InN/GaN QDs. A dark exciton and biexciton
ground state for small QDs is found. For larger structures, the
strong electrostatic built-in fields lead to a level reordering for
the hole states, which results in a bright exciton ground state.
Furthermore, truncated pyramidal GaN/AlN QDs with zinc blende
structure are investigated. Again, Coulomb and dipole matrix
elements are evaluated from the single-particle wave functions and
the optical spectra are analyzed. Finally, the results of our
atomistic TB description are compared with continuum-like
approaches.
Autor*in
Stefan Schulz
Themen in »Electronic and Optical Properties of Quantum Dots: A Tight-Binding Approach«
Nitrids Optical Properties Quantum Dots Tight-Binding