Defects and Diffusion in Semiconductors XII
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Beschreibung
This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes – in line with the policy of including original papers on all of the major material groups.
Autor*in
Trans Tech Publications Ltd
Themen in »Defects and Diffusion in Semiconductors XII«
Aluminium-Zinc Alloys Carbide Precipitate Crack Growth Defect Centers Diffusion Electrodeposited Alloys Electron Paramagnetic Resonance (EPR) Finite Element Model (FEM) HV Values Liquid State Metallic Material Natural Aging Ni3+ Non-Gaussian