Gettering and Defect Engineering in Semiconductor Technology XIII
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Beschreibung
GADEST 2009
Selected, peer reviewed papers from the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Autor*in
Trans Tech Publications Ltd
Themen in »Gettering and Defect Engineering in Semiconductor Technology XIII«
Cathodoluminescence Defect Dislocation DLTS EBIC Gettering Grain Boundary Implantation Ion Implantation IR-Spectroscopy Multicrystalline Silicon Oxygen Oxygen Precipitation Phosphorus Diffusion Gettering Photoluminescence (PL)