Ultra Clean Processing of Semiconductor Surfaces IX
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Beschreibung
UCPSS 2008
Selected, peer reviewed papers from the 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), held in Bruges, Belgium, September 22-24, 2008
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices.
Autor*in
Trans Tech Publications Ltd
Themen in »Ultra Clean Processing of Semiconductor Surfaces IX«
Cavitation Cleaning Copper (Cu) Damage Etch Rate HF Megasonic Metal Gate Metallic Contamination Ozone Particle Particle Removal Photoresist Removal Silicon-Germanium (SiGe) Single Wafer Cleaning