Resistive switching in ZrO2 based metal-oxide-metal structures
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Beschreibung
There is an increasing interest in resistive switching (RS) random-access memories (RRAM)
for future electronics. A popular class of materials nowadays investigated for redox based
resistive switches is transition metal oxides. A great challenge for the RRAM production is to
develop a well-performing RS device compatible with a highly scalable CMOS technology.
Among the group IV metal oxides, ZrO2 is of interest for RRAM because of its chemical
similarity to HfO2 (exploited for high-k gate and RRAM applications) and because it is a fast
ion conducting material. The goal of this work is a deeper understanding of the influence of
the (i) metal-oxide-metal (MOM) layer stacks configuration, (ii) the oxide films
microstructure, (iii) and their defect structure on the appearance of different switching
modes, i.e. unipolar (UP) and bipolar (BP).
The thesis is based on the work which was supported by a European Marie Curie action and
performed at the Research Center Jülich in collaboration with the Finnish ALD Center of
Excellence in Helsinki. The first part deals with the fabrication of ZrO2 thin films by an
industrial compatible atomic layer deposition (ALD) process, the chemical, structural and
morphological characterization of the films, the growth of ZrO2/TiO2 bilayers, the integration
of the layers into metal-oxide-metal (MOM) devices and the electrical characterization with
focus on the RS behavior. In the second part the effect of the device structure, in particular
the thickness of the electrochemical active electrode (EAE) and the ZrO2 film morphology, on
the RS switching polarity of Pt/ZrO2/(EAE) cells is discussed.
Autor*in
Irina Kärkkänen