Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-Speed Digital Integrated Circuits

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Electron Beam Lithography, EBL, Ultra High-Speed, Digital Integrated Circuits, Static Frequency Divider Indium Phosphide, Antimonide, InP/GaAsSb, Double Heterojunction, Bipolar Transistor, DHBT, Sub-micron

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