Design and Characterization of K-Band Receiver Front-End Integrated Circuits in 130 nm CMOS

Beschreibung

This work presents the design and implementation of 24 GHz receiver front-end integrated circuits in the 130 nm CMOS technology. The main challenge of this work is to design state of the art receiver circuits at 24 GHz using the NMOS transistors with a peak transit frequency of 80 GHz, which is much smaller than other 130 nm CMOS transistors. Low noise amplifiers with three different structures which achieve state of the art noise figure performance for LNAs in 130 nm CMOS are presented in this work. Moreover, a single balanced passive mixer and a single balanced Gilbert-type active mixer are presented. The passive mixer shows a lower conversion loss than other similar designs in K-band. The active mixer has been realized with a current bleeding technique and a resonant inductor in order to improve the conversion gain and to reduce the flicker noise of the mixer. At the end of this thesis two single channel receivers both consisting of an LNA and a mixer are presented.

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Jin Dang

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130nm CMOS CMOS K-Band Receiver

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