Studying the Effect of Cu Microstructure on Electromigration Reliability using Statistical Simulation

Beschreibung

Electromigration (EM) describes the mass transport in a metal driven by the momentum transfer from electron scattering with metal ions. This can develop into a degradation process due to void growth for on-chip interconnects when subjected to high electric current densities and eventual interconnect line failure. The mass transport occurs in decreasing order of magnitude along interfaces grain boundaries and in bulk. The diffusivities along interfaces and grain boundaries are determined by crystallographic orientation. Diffusion discontinuities can create flux divergent sites that control void growth kinetics and failure characteristics. Most of the earlier studies of EM modeling have assumed an averaged diffusivity measured across the underlying crystallographic microstructure. The objective of this thesis is to study the effect of microstructure on EM reliability by modeling of the diffusivity corresponding to grain orientation at the interface and to project the EM lifetime and the standard deviation (sigma) of the failure statistics. The simulation consists of two parts.

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Matthias Kraatz

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Copper Electromigration Grain Growth Interconnects Microprocessor Simulation Supercomputer

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