Comparison of GaN-Technologies and Their Potential for High Power Amplification at K-/Ka-Band

Beschreibung

This work deals with the analysis, design, and realization of AlGaN/GaN power amplifier monolithic microwave integrated circuits (MMICs) at K/Ka-band between 20 GHz and 30 GHz. Three different European AlGaN/GaN technologies are evaluated and compared. Furthermore, technological limits in terms of output power, efficiency, and chip size with respect to the application in distributed antenna systems are extracted. As a result, state-of-the-art performance is demonstrated for the manufactured MMICs.

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Stanislav Samis

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Power Amplifier MMIC Gallium Nitride

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