AlGaInP-based high-performance semiconductor disk lasers for the red spectral range: Gain-chip design, harmonic generation and a new laser concept
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Beschreibung
In the present scientifc study, performed at the "Institut für Halbleiteroptik und Funktionelle Grenzflächen" (IHFG), University of Stuttgart, we examined optically pumped AlGaInP-based semiconductor disk lasers emitting in the red wavelength range (650 - 670 nm). The goals of this study were to improve the overall performance of these lasers and to increase the power of the extracted intra-cavity created second harmonic laser (325 - 335 nm) as far as possible pursueing three strategies:
Applying a strain compensation technique to create, according to the strain situation around the quantum well (QW)-packages, a more homogenous environment for each QW-package. Adapting the distribution of the QWs inside the active region of the laser to the amount of absorbed pump light. Thereby, a more homogeneous charge carrier distribution is created in the single QW-packages leading to better spectral overlap of the gain provided by each QW-package. And finally, wet-chemically isolating the laser-active region and embedding it between two intra-cavity heat spreaders. This heat spreader sandwiched membrane external-cavity surface-emitting laser (MECSEL) design optimizes the heat dissipation out of the active region by makinge Bragg reflectors obsolete which generally provide low heat conductivity. The MECSEL enables a variety of new material combinations for new laser wavelengths and provides further potential for power scaling.
Autor*in
Hermann Kahle
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AlGaInP-based high-performance semiconductor disk lasers red spectral range second harmonic laser