Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Beschreibung

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.
Heavily doped silicon is required for devices such as PowerMOSFETs. For the devices to be as sufficient as possible it is necessary to lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the Czochralski method dislocation formation occurs frequently, reducing yield. Thus this work covers the topics intrinsic point defects, electrical activity of dopant atoms, spreading of dislocations and facet growth. Each topic is discussed in regard of their possible impact on the formation of the dislocations. In doing so, the control of facet growth is found to be most crucial to prevent the formation of the dislocations.

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Ludwig Stockmeier

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Fraunhofer IISB physic energy technology and engineering crystal growth dislocation Czochralski doping defect Kristallographen Kristallzüchter Elektroingenieur Kristallographen Kristallzüchter Elektroingenieure

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