GaN-Based Tri-Gate High Electron Mobility Transistors.
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Beschreibung
Delivering high solid-state power at millimetre-wave frequencies holds critical importance in achieving reliable and cost-effective operation in various wireless communication applications. The developed GaN Tri-gate transistors in this work are proven to be a viable candidate for achieving significantly higher RF output power as well as excellent circuit-level performance is demonstrated for the first time.
The rapidly-growing data throughput rates in a wide range of wireless communication applications are pushing the established semiconductor device technologies to their limits. Considerably higher levels of solid-state output power will therefore be needed to meet the demand in the next generation satellite communications as well as the RADAR systems. Owing to their superior material properties such as high breakdown fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating in the microwave frequency bands. On the other hand at the millimetre-wave (MMW) and sub-MMW frequencies, highly-scaled GaN HEMTs are prone to experiencing deteriorated high frequency characteristics which severely limit the high-power performance. In an attempt to overcome this, 3-dimensional GaN HEMT devices featuring the Tri-gate topology are developed in this work, exhibiting enhanced performance in terms of both off- and on-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed logic applications.
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Fraunhofer IAF microwave technology electronics: Circuits & components electronic devices & materials transistor microwave technology circuit and component semi-conductors and super-conductors Hochfrequenztechnik-Ingenieur Halbleiterphysiker Hochfrequenztechnik-Ingenieure Halbleiterphysiker