Local charge carrier diffusion and recombination in InGaN quantum wells

Beschreibung

Light emitting InGaN/GaN quantum wells are studied with confocal micro photoluminescence microscopy. The charge carrier density dependent recombination rates in the quantum wells are investigated with the help of the so called ABC model and by measuring charge carrier density and recombination. Additionally, lateral charge carrier motion was directly observed and the diffusion constant measured at room and 15 K.
Light emitting InGaN/GaN quantum wells were studied with the help of confocal micro photoluminescence microscopy. The focus is put on charge carrier dynamics in the quantum wells. Recombination rates of different recombination mechanisms are investigated, especially considering the efficiency loss of InGaN based light emitting diodes at high charge carrier densities, known as droop. This is done with the help of the so called ABC model and measurements of the charge carrier density dependent recombination. An expansion of the ABC model beyond Maxwell-Boltzmann statistics is also discussed to include high charge carrier density effects. Additionally, lateral charge carrier motion in the quantum well is directly observed and analyzed, both at room temperature and at 15 K.

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Julia Danhof

Themen in »Local charge carrier diffusion and recombination in InGaN quantum wells«

Fraunhofer IAF Angewandte Forschung applied research

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