Circuit-Simulation Models of High-Power Devices Based on Semiconductor Physics
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Beschreibung
In this work, circuit-simulation models of high-power devices are developed, which are not available in commercial circuit-simulation programs. The major focus is on thyristors that can be turned off by their gate, i. e. the Gate Turn-Off (GTO-) type thyristors. This also includes modern GTO variants such as GCT, MTO and ETO.
The model equations are based on semiconductor physics using the lumped-charge method. By this method, an accurate device model with moderate simulation effort is realized. In addition to the fundamental 1-dimensional behavior, 2-dimensional effects and the parallel connection of several single cells in real devices are also considered in the models.
The models developed in this work are implemented in the circuit-simulation program PSpice using the Device Equation option. Finally, simulation results obtained by the new models are compared to finite-element simulations and to experimental measurements showing excellent agreement.
Autor*in
Stefan Schröder
Themen in »Circuit-Simulation Models of High-Power Devices Based on Semiconductor Physics«
Elektrotechnik Halbleitertechnik Leistungselektronik Modellierung Simulation