Analysis and Simulation of High Electron Mobility Transistors
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Beschreibung
High Electron Mobility Transistors (HEMTs) are among the fastest three terminal devices existing. They find their application in communication, sensing, and radar, when high output power, high gain, and low noise properties are required. This work describes the development and application of simulation software, namely the two-dimensional device simulator MINIMOS-NT, for heterostructure devices. In a continuous interplay with process development, a number of HEMT technologies from different foundries are modeled. The frequency range of application covers cell phones (900 MHz) up to ultra-high frequency low noise amplifiers (140 GHz). Thereby special emphasis is put on the Ka-frequency band (26.5-40 GHz) in this work.
Devices from various AlGaAs/InGaAs/GaAs and InAlAs/InGaAs HEMT technologies can be precisely simulated in a global calibration concept. For high-power HEMTs in the Ka-band simulation of impact ionization and of self-heating is included in the simulations. The results are correlated to three-dimensional thermal chip simulation. Several studies are presented, e.g. in order to predict the mechanisms within recessed devices.
Autor*in
Rüdiger Quay
Themen in »Analysis and Simulation of High Electron Mobility Transistors«
Bauelement Device HEMT Halbleitertechnik High Electron Mobility Transistor Hochfrequenz Ka-Band Load Pull MODFET S-Parameter Simulation