The Monte Carlo Method for Semiconductor Device Simulation
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Beschreibung
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.
Autor*in
Carlo Jacoboni
Themen in »The Monte Carlo Method for Semiconductor Device Simulation«
Transistor Transport field-effect transistor heterojunction bipolar transistor integrated circuit ion-sensitive field effect transistor metal insulator semiconductur field-effect transistor metal oxide semiconductur field-effect transistor metal semiconductor field-effect transistor micro-alloy transistor, MAT physics simulation