Simulation of Semiconductor Processes and Devices 2001

Beschreibung

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Autor*in

Dimitris Tsoukalas

Themen in »Simulation of Semiconductor Processes and Devices 2001«

CMOS Diffusion Double-diffused metal-oxide-semiconductor transistor Fluctuation Leistungsfeldeffekttransistor Modeling Monte Carlo Nanotube Transistor Transport field-effect transistor heterojunction bipolar transistor metal semiconductor field-effect transistor quantum dot thin film

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