Field-effect Self-mixing Terahertz Detectors

Beschreibung

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
Nominated as an Outstanding Ph.D. thesis by the Chinese Academy of Sciences Built a comprehensive field-effect terahertz detector model which is applicable for detector optimization Presents for the time the localized self-mixing effect and the polarity flip of the self-mixing current alone the channel Covers detailed aspects of detector design, fabrication, characterization and simulation Includes supplementary material: sn.pub/extras

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Jiandong Sun

Themen in »Field-effect Self-mixing Terahertz Detectors«

Finite-Difference Time-Domain (FDTD) GaN/AlGaN Heterostructure High-Electron-Mobility Transistor (HEMT) Self-Mixing THz Near-Field Optics Terahertz Antenna Terahertz Detector Two-Dimensional Electron System (2DES) Two-Dimensional Plasma Wave

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