Metal Impurities in Silicon-Device Fabrication
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Beschreibung
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.
For the first time, scientists and production engineers working on defect engineering, gettering and materials science can obtain in one volume the practical aspects of preparing, measuring and understanding the behavior of metal impurities in silicon. The book is also a valuable reference of up-to-date scientific investigations, relevant data and the properties of impurities in silicon.
Autor*in
Klaus Graff
Themen in »Metal Impurities in Silicon-Device Fabrication«
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