Amorphous and Crystalline Silicon Carbide IV

Beschreibung

The contributions contained in this proceedings volume provide a comprehensive overview of recent research progress achieved on silicon carbide and related materials in amorphous, microcrystalline, polycrystalline, and crystalline forms. They report the latest results and applications and present the most up-to-date information essential for scientists, eningeers, and students.

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Cary Y. Yang

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SiGe band structure crystal development diodes electron electronic material hydrogen laser material optoelectronics semiconductor simulation thin films transistor

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