Gas Source Molecular Beam Epitaxy
Growth and Properties of Phosphorus Containing III-V Heterostructures
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Beschreibung
Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.
Autor*in
Morton B. Panish
Themen in »Gas Source Molecular Beam Epitaxy«
chemistry diffraction electronics epitaxy exciton laser optical communication optical properties optoelectronic devices photodiode semiconductor spectroscopy superlattices transistor transport