Fundamental Aspects of Silicon Oxidation
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Beschreibung
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).
This book deals with an important basic technology in microelectronics. It discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
This is the only book that addresses fundamental issues in silicon oxidation at a level that will remain useful for 10-20 years Because it combines both state-of-the-art experimental approaches and theoretical methods it should become a reference book for anyone interested in studying insulators on semiconductor substrates, such as people in opto-electronics and microelectronics Includes supplementary material: sn.pub/extras
Autor*in
Yves J. Chabal
Themen in »Fundamental Aspects of Silicon Oxidation«
EELS STEM chemistry dynamics electron energy loss spectroscopy electron microscopy electron spectroscopy electronic structure microscopy oxidation silicon spectroscopy surface surfaces tunneling
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From the reviews:
"Silicon remains the dominant microelectronic material … . One of the reasons for this is the ‘extraordinary perfection’ of its interface with its thermally grown oxide. … The book provides a valuable snapshot as at early 2000 of the range of diverse approaches, both theoretical and experimental, being applied … by some of the leading practitioners in this field. It would be of interest to scientists and engineers with a specialist’s interest in this or related interfaces." (M. A. Green, The Physicist, Vol. 38 (6), 2001)
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