Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies
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Beschreibung
There are continuous efforts focussed on improving road traffic safety worldwide. Numerous vehicle safety features such as driver assistance systems have been invented. Many driver assistance features rely on radar-based sensors, but are highly-priced. Realization of low-cost radar front-end circuits would enable their implementation in less expensive economy cars, considerably contributing to traffic safety. Cost reduction requires high-level integration of the microwave front-end circuitry, specifically analog and digital circuit blocks co-located on a single chip. The book presents the design, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar technologies. The applicability of a standard digital 0.13 μm CMOS technology for realization of a 24 GHz narrow-band radar front-end sensor is investigated. The presented circuits are suitable for automotive, industrial and consumer applications, as e.g. lane-change assistant, door openers or alarms.
There are continuous efforts focussed on improving road traffic safety worldwide. Numerous vehicle safety features have been invented and standardized over the past decades. Particularly interesting are the driver assistance systems, since these can considerably reduce the number of accidents by supporting drivers’ perception of their surroundings. Many driver assistance features rely on radar-based sensors. Nowadays the commercially available automotive front-end sensors are comprised of discrete components, thus making the radar modules highly-priced and suitable for integration only in premium class vehicles. Realization of low-cost radar fro- end circuits would enable their implementation in inexpensive economy cars, c- siderably contributing to traffic safety. Cost reduction requires high-level integration of the microwave front-end c- cuitry, specifically analog and digital circuit blocks co-located on a single chip. - cent developments of silicon-based technologies, e.g. CMOS and SiGe:C bipolar, make them suitable for realization of microwave sensors. Additionally, these te- nologies offer the necessary integration capability. However, the required output power and temperature stability, necessary for automotive radar sensor products, have not yet been achieved in standard digital CMOS technologies. On the other hand, SiGe bipolar technology offers excellent high-frequency characteristics and necessary output power for automotive applications, but has lower potential for - alization of digital blocks than CMOS.
Describes advanced circuits and techniques around 24GHz for radar applications Uniquely compares circuits in CMOS and SiGe technology Systematic comparison of active and passive mixers Complies handy methods and tips for de-embedding, numerical calculations etc. Includes supplementary material: sn.pub/extras
Autor*in
Vadim Issakov
Themen in »Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies«
CMOS ISM Radar SiGe field-effect transistor integrated circuit integrated circuits