Optical Absorption of Impurities and Defects in Semiconducting Crystals

Beschreibung

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Autor*in

Bernard Pajot

Themen in »Optical Absorption of Impurities and Defects in Semiconducting Crystals«

bulk optical absorption doping of diamond doping of semiconductors interstitial atoms optical absorption spectroscopy in optical band gaps of insulators and semiconductor impurities and defects semiconductors spectroscopy and microscopy of defects

Stimmen zu »Optical Absorption of Impurities and Defects in Semiconducting Crystals«

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