Photomodulated Optical Reflectance

Beschreibung

One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
Selected as an outstanding contribution by K.U. Leuven Reports significant advances in non-destructive testing of semiconductors New approaches have potential for industrial application Includes supplementary material: sn.pub/extras

Autor*in

Janusz Bogdanowicz

Themen in »Photomodulated Optical Reflectance«

Dopant and Carrier Profiling Electrooptical and Electrothermal Effects Non-destructive Semiconductor Testing Ultra-shallow Junction Characterization carrier and Heat Transport in Highly Injected Semiconductors

Stimmen zu »Photomodulated Optical Reflectance«

Details

Link teilen