Low Power and Reliable SRAM Memory Cell and Array Design
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Beschreibung
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Basic book on memory design Combines the aspects of SRAM technique, analysis and design A valuable reference work for researchers and engineers alike Includes supplementary material: sn.pub/extras
Autor*in
Koichiro Ishibashi
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CMOS LSI Memory cell Reliability SRAM Study
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Details
ISBN: 9783642195686
Verlag: Springer Berlin
Erscheinung: 18.08.2011