Ferroelectric Memories
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Beschreibung
Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.
The book gives a comprehensive introduction to the field by an established expert on ferroelectric memories
State-of-the-art device designs are illustrated among the book's many figures. More than 500 up-to-date references and 76 problems for students make the book useful both as a research reference and as a text for graduate or advanced undergraduate students. This book is the only single-authored one in the field, all the other are edited collections of papers.
Autor*in
James F. Scott
Themen in »Ferroelectric Memories«
RAM Random Access Memory ceramics ferroelectrics memories non-volatille physics thin films