Ishiwara Ferroelectric Random Access Memories

Ferroelectric Random Access Memories

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Fundamentals and Applications

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Beschreibung

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.


In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.


Presents the state of the art of ferroelectric RAM design Application oriented reviews by leading experts Up-to-date references Includes supplementary material: sn.pub/extras

Autor*in

Hiroshi Ishiwara

Themen in »Ferroelectric Random Access Memories«

Ferroelectric RAM Random Access Memory Semiconductors alloy circuit design High Density liquid material metals microscopy nano-scale reliability semiconductor testing thin films

Stimmen zu »Ferroelectric Random Access Memories«

Details

ISBN: 9783642073847
Verlag: Springer Berlin
Erscheinung: 03.12.2010

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