Silicon Quantum Integrated Circuits
Silicon-Germanium Heterostructure Devices: Basics and Realisations
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Beschreibung
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Gives the first comprehensive presentation of the development of mesoscopic physics towards electronic nanodevices
Autor*in
E. Kasper
Themen in »Silicon Quantum Integrated Circuits«
Epitaxy Microelectronics Quantum effect devices Strained layer heterostructures Transistor electronics field-effect transistor heterojunction bipolar transistor integrated circuit optoelectronics