Technology of Gallium Nitride Crystal Growth
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Beschreibung
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Summarizes the current state of the art of GaN growth technology Integrates materials science and physical aspects A reference work for researchers and engineers alike May serve as a study text for graduate students in materials sciences Includes supplementary material: sn.pub/extras
Autor*in
Dirk Ehrentraut
Themen in »Technology of Gallium Nitride Crystal Growth«
Ammonothermal growth Crystal growth from solution Gallium nitride (GaN) Hydride vapor phase epitaxy (HVPE) Properties of GaN crystal spectroscopy
Stimmen zu »Technology of Gallium Nitride Crystal Growth«
Details
ISBN: 9783642048302
Verlag: Springer Berlin
Erscheinung: 14.06.2010