Gas Source Molecular Beam Epitaxy
Growth and Properties of Phosphorus Containing III-V Heterostructures
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Beschreibung
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.
Autor*in
Morton B. Panish
Themen in »Gas Source Molecular Beam Epitaxy«
chemistry diffraction electronics epitaxy exciton laser optical communication optical properties optoelectronic devices photodiode semiconductor spectroscopy superlattices transistor transport