LPCVD Silicon Nitride and Oxynitride Films
Material and Applications in Integrated Circuit Technology
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Beschreibung
This volume, based on work done in an ESPRIT project, gives a broad overview of the chemical and physical characteristics of silicon oxynitrides, emphasizing how they influence the electrical behavior of this material, which is important for integrated circuit technology.
Autor*in
F.H.P.M. Habraken
Themen in »LPCVD Silicon Nitride and Oxynitride Films«
Dielectrics Dielektrizität Dünnschichttechnik Integrated Circuits (IC) Integrierte Schaltung Metal-Nitride-Oxide-Silion (MNOS) Metall-Nitrid-Oxid-Silizium-Strukturen (MNOS) Silicon Nitride and Oxynitride Thin Films Siliziumnitrid- und Oxynitrid-Dünnschichten Structures