Polycrystalline Semiconductors II
Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30–August 3,1990
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Beschreibung
This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het erointerfaces - (POLYSE '90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions.
This volume discusses the structural, chemical, and electronic properties of grain boundaries, dislocations, and hetero-interfaces in polycrystalline semiconductors. Researchers and students in this field will find here much valuable information relevant to both fundamental research and technological applications.
Autor*in
Jürgen H. Werner
Themen in »Polycrystalline Semiconductors II«
Grain boundaries in semiconductors dislocations misfitting interfaces polycrystalline semiconductors semiconductor thin films