Applied RHEED
Reflection High-Energy Electron Diffraction During Crystal Growth
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Beschreibung
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
Up-to-date review of the state of the art Important methods for surface and semiconductor physics Includes supplementary material: sn.pub/extras
Autor*in
Wolfgang Braun
Themen in »Applied RHEED«
electron energy loss spectroscopy epitaxy semiconductor simulation spectroscopy
Stimmen zu »Applied RHEED«
Anyone interested in L.-M. Peng's chapter on RHEED will want to know that an entire volume on the subject has been written by W. Braun (9). This is a substantial work, full of practical detail...
Ultramicroscopy, 2001/87
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