Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
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Beschreibung
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Up-to-date overview Includes supplementary material: sn.pub/extras
Autor*in
Nikolai N. Ledentsov
Themen in »Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy«
crystal diffusion epitaxy film segregation surface