Jacob Greenberg Greenberg Thermodynamic Basis of Crystal Growth

Thermodynamic Basis of Crystal Growth

von Jacob Greenberg

P-T-X Phase Equilibrium and Non-Stoichiometry

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Beschreibung

The properties of some inorganic materials (semiconductors, and high-Tc superconductors, in particular) are strongly dependent on the composition of the crystal, whereas the homogeneity range, or the maximum non-stoichiometry of the solid, is very often less than the precision of the conventional analytical methods (roughly 0.1 at.%). Consequently, new and more sensitive methods must be developed to probe the non-stoichiometry. For many types of materials vapor pressure scanning can be such a technique. This method was developed by the author, and it is a way of determining the composition of the solid, X, at the measured temperature, T, and pressure, P, with an unparalleled accuracy of up to 10-4 at.% at high temperatures (up to 1200° C). Along with the results obtained by the author and his colleagues, P-T-X diagrams of other important materials (e.g. III-V, IV-VI semiconductors) are also discussed. The exposition is in two parts. In the first one a geometrical thermodynamic approach is used for a step-by-step presentation of P-T-X diagrams of binary systems. The types of diagrams most frequently encountered in materials science are discussed. The composition of crystals grown from various matrices is presented in conjunction with the P-T-X diagrams. In the second part examples of systems which have been recently experimentally studied are given. Throughout the book emphasis is placed on the Phase Rule argument of universal solubility. This is where this book differs from the other (quite scarce) texts on P-T-X phase diagrams. This book will be of interest to the wide community of materials scientists, and to university lecturers and their students.
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. It appeals to researchers, engineers and advanced students.
The reader will benefit from learning about the recent achievements in the preparation of inorganic materials using controlled stoichiometry The book is abundantly illustrated with P-T-X diagrams of inorganic materials Includes supplementary material: sn.pub/extras

Autor*in

Jacob Greenberg

Themen in »Thermodynamic Basis of Crystal Growth«

Non-stoichiometry Semiconductor crystal inorganic materials materials science scanning semiconductors vapor pressure

Stimmen zu »Thermodynamic Basis of Crystal Growth«

"We recommend this book to any physicist concerned with phase diagrams and to any materials scientist concerned with semiconducting compounds."

--Physicalia


()

Details

ISBN: 9783540412465
Verlag: Springer Berlin
Erscheinung: 20.11.2001

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